Exhibitor Seminars
TSN3
Interpreter
TechSTAGE NORTH, East Hall 5, TOKYO BIG SIGHT
15:10-16:50 Wed., 13-Dec
STS Power Device Session(2)
Wide Band Gap Power Devices -GaN/SiC/GaOx-
Sponsored by
Session Description
Continued: Full-scale practical applications of new material power devices has begun. This session will explore the latest technology and market trends for power devices, including SiC, GaN, and GaOx.
Program Agenda
Koukou Suu ULVAC, Inc.
Yasuhiro Uemoto Panasonic Semiconductor Solutions Co., Ltd.
Takashi Nakamura ROHM Co., Ltd.
15:10-15:35
Power Semiconductor Market Overview
Masami Inaba
Deputy Editor in Chief
Electric Device News
Sangyo Times, Inc.
Power semiconductor market is expected to expand in the future mainly for automotive, industrial, white goods and Electric railway. Domestic companies are planning to restart capital investment mainly around IGBT, and European companies are actively developing businesses. Furthermore, the emergence of emerging Chinese companies is expected in the future, and the market is becoming active. In addition, next-generation power semiconductors such as SiC and GaN are about to enter the diffusion period in recent years in addition to existing silicon-based devices. We will report the trend of the latest power semiconductor market from both market and technology side.
15:35-16:00
GaN-on-Si epitaxy: Improvements in isolation and other parameters
Atsushi Nishikawa
Co-founder and CTO
Management
ALLOS Semiconductors GmbH
GaN material properties are crucial for GaN device performance. For example high crystal quality and thick GaN layers can help improve isolation. Furthermore careful layer stack design plays an important role as does doping to trap carriers.
Among other aspects this work will show experimental data on very low vertical leakage currents of 0.07 µA/mm² @ 600 V without intentional C-doping.
16:00-16:25
Package and assembly technologies for power semiconductor modules
Yoshinari Ikeda
Manager
Packaging Development Dept.
Fuji Electric Co., Ltd.
Power semiconductor modules are widely applied and spreading in industrial, hybrid vehicle, electric vehicle and traction uses. The role of a power semiconductor module used in these fields becomes more and more important.
For power semiconductor modules such as IGBT (Insulated Gate Bipolar Transistor) module, thermal and reliability technologies are very important. This slide describes about the novel thermal design, the efficient direct cooling system, and the joining technology for high temperature operation. It is also introduced the package technologies for SiC (Wide Band Gap) device.
16:25-16:50
Aichi Synchrotron Radiation Center-Open Facility for Industrial Use
Yoshikazu Takeda
Director
Aichi Synchrotron Radiation Center
Aichi Science & Technology Foundation
Aichi Synchrotron Radiation Center is an open facility at the center of "Knowledge Hub Aichi" and its main purpose is to support manufacturing technologies with high-value added.
In cooperation with industry, academia, and Aichi Prefecture, Aichi Science and Technology Foundation is responsible for maintenance, operation of the facility, and user services.
Contrary to the synchrotron radiation facility for academic use, our facility provides a menu of easy-to-use and improved support systems with an emphasis on new users and industrial users.