Exhibitor Seminars
TSN5
Interpreter
TechSTAGE NORTH, East Hall 5, TOKYO BIG SIGHT
12:50-14:30 Thu., 14-Dec
STS Advanced Lithography Session(1)
Readiness of EUV Lithography for High Volume Manufacturing
Sponsored by
Session Description
This session will address the ongoing issues and technologies employed in ramping EUV lithography to full production, including materials and light source.
Program Agenda
Soichi Owa Nikon Corp.
Masahiko Ikeno Hitachi High-Technologies Corp.
12:50-13:20
EUV Lithography Industrialization Progress
Kenji Morisaki
Director
Technical Marketing
ASML Japan Co., Ltd.
This presentation will provide an overview of the industrialization of EUV Lithography, including the latest data on imaging, overlay, defectivity and source power/ productivity. It will include an update on TWINSCAN NXE:3400B, ASML’s latest EUV tool, which customers intend to use for volume production.
13:20-13:50
High Power HVM LPP-EUV Source with Long Collector Mirror Lifetime for Semiconductor High Volume Manufacturing
Hakaru Mizoguchi
Executive Vice President CTO, General Manager of Research Division
Research Division
Gigaphoton Inc.
We have been developing CO2-Sn-LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL. Unique and original technologies such as; combination of pulsed CO2 laser and Sn droplets, dual wavelength laser pulses shooting and mitigation with magnetic field have been developed in Gigaphoton Inc.. We have developed first practical source for HVM; “Proto#2” 1) in 2014. We have proved high average power CO2 laser more than 20kW at output power cooperate with Mitsubishi electric cooperation2). βmachine-Pilot#1 is up running and its demonstrates HVM capability; EUV power recorded at111W average (117W in burst stabilized, 95% duty) with 5% conversion efficiency for 22hours operation in October 2016). Availability is potentially achievable at 89% (2weeks average), also superior magnetic mitigation has demonstrated promising mirror degradation rate (= 0.5%/Gp) above 100W level operation with dummy mirror test.4). Recently we have demonstrated actual collector mirror reflectivity degradation rate is less than -0.7%/Gp by using real collector mirror around 100W ( at I/F clean ) in burst power during one week operation. We will report latest data at symposium.
13:50-14:20
Material Solutions for EUV Lithography
Ken Maruyama
Manager
Semiconductor Materials Lab., Fine Electronic Materials Research Laboratories, Yokkaichi Research Center
JSR Corp.
In the semiconductor industry, microfabrication of tighter design rules is being accelerated, and continuous improvement of advanced device integration is being realized, through the practical application of EUV lithography. This talk will introduce JSR’s EUV resist development concepts and capabilities for stable manufacturing and quality control.