Exhibitor Seminars
TSN9
Interpreter
TechSTAGE NORTH, East Hall 5, TOKYO BIG SIGHT
15:10-16:50 Fri., 15-Dec
STS Advanced Device Session(2)
Future Vision for Advanced Device 2
Sponsored by
Session Description
Continued: In this session, front-line engineers will present the latest technology trends for logic, memory and image sensor devices required for smaller, but higher performing mobile and IoT devices.
Program Agenda
Isao Nambu, EBARA Corp.
Junichi Mitani Socionext Inc.
Masazumi Matsuura Renesas Electronics Corp.
Yoshiki Nakashima SanDisk Ltd.
Masanobu Sato SCREEN Semiconductor Solutions Co., Ltd.
Hayato Iwamoto Sony Semiconductor Solutions Corp.
15:10-15:40
Development of the polarization image sensor and the future prospects
Tomohiro Yamazaki
Engineer
Development Section 2, IS Device Development Dept., ID Process Development Div.
Sony Semiconductor Manufacturing Corp.
Polarization is one of the fundamental properties of light, and is particularly useful in highly functional imaging (e.g., computing the normal vector of the target surface, and specular surface reflection reduction). We developed a four-directional pixel-wise polarization CMOS image sensor. I introduce about the process that reached the development of the image sensor fabricated an air-gap wire grid polarizer in the wafer process that became a key technology to improve basic characteristics of polarization sensors, comparison with the conventional polarization sensor, and the future prospects.
15:40-16:10
Development of process technology for ReRAM
Atsushi Himeno
Chief Engineer
Manufacturing Center, Semiconductor Business Unit
Panasonic Semiconductor Solutions Co., Ltd.
ReRAM (Resistive Random Access Memory) has attracted a great deal of attention as newly non-volatile memory which has high speed operation and low power consumption. In 2013, we realized the world's first mass production of 180 nm node ReRAM. And this time, we have developed new process technologies for fine ReRAM cells corresponding to 40 nm node and demonstrated excellent reliability in the memory array. In this presentation, I will explain characteristics, mechanism and process technology of ReRAM.
16:10-16:40
New computing paradigm with non-volatile memories
Ken Takeuchi
Professor
Department of Electrical, Electronic and Communication Engineering
Chuo University
This presentation reviews the new computing paradigm such as near-data computing and in-storage computing, which will be enabled by non-volatile memories.