Exhibitor Seminars
TSN1
Interpreter
TechSTAGE NORTH, East Hall 5, TOKYO BIG SIGHT
10:20-12:00 Wed., 14-Dec
STS Power Device Session(1)
The New Material Power Semiconductor(1)
Sponsored by
Session Description
The commercialization of power devices using new materials is beginning to gather momentum, with SiC power devices finding electric car and railroad applications, and new high-performance devices are being unveiled every day. This session will cover the present situation in SiC and GaN power devices and mounting, and peripheral technologies, including market trends.
Program Agenda
Yasuhiro Uemoto, Panasonic Semiconductor Solutions Co., Ltd.
Koukou Suu, ULVAC, Inc.
Takashi Nakamura, ROHM Co., Ltd.
10:20-10:50
Recent Trend of SiC Power Devices and their applications
Takashi Shinohe
Chief Specialist
Electron Devices Laboratory, Corporate R&D Center
Toshiba Corporation
Silicon Carbide (SiC), which is one of the promising candidates for the next generation power semiconductor materials, has been developed rapidly toward the mass production of power devices. The practical use of SiC power devices have started in traction motor control of train system. The large scale mass production for automotive application is expected to start from around 2020. In this presentation, the present status of SiC power device development and their system impacts, national projects and international standardization will be reviewed.
10:50-11:20
Wide Bandgap Semiconductor Solution
Tomomasa Emoto
Special Appointment Manager
Technology Strategy
Texas Instruments Japan Ltd.
Texas Instruments, Inc. (TI) supports Wide Bandgap Semiconductor Solution with Gallium Nitride (GaN) FET and Drivers for GaN and Silicon Carbide (SiC) MOSFET with using advanced technology.
TI’s GaN FET is innovatively differentiated with integration of GaN (80V and 600V) FET and Gate Driver. Gate Driver contains safety circuit protection functions such as Slew Rate Control to reduce ringing and to improve EMI, Under Voltage Lock Out, Over Temperature Protection and Over Current Protection. TI also supports various standalone Gate Drivers for GaN FET and SiC MOSFET in addition to Si MOSFET and IGBT based on the long history and experience in high voltage technology. In this presentation, TI’s 80V GaN Half Bridge Module, 600V Power Stage, Dual Channel 5.7kVrms Isolated Gate Driver and Control IC will be introduced to support entire Ecosystem with using Wide Band Gap Semiconductor.
11:20-11:50
Technical trends of Power Modules using SiC
Hiroshi Yamaguchi
Deputy Director
Advanced Power Electronics Research Center
National Institute of Advanced Industrial Science and Technology
Recently, new power semiconductors such as SiC are attracting interests, and many applications are being investigated. On the other hand, these new power semiconductors require the high level packaging technologies in order to realize the high performance power modules. This is due to the characteristics difference between the new power devices and the conventional power devices. Based on this viewpoint, the technical trends of SiC power module are explained.