Exhibitor Seminars
TSN5
Interpreter
TechSTAGE NORTH, East Hall 5, TOKYO BIG SIGHT
12:50-14:30 Thu., 15-Dec
STS Advanced Lithography Session(2)
Status of Lithography Extensions
Sponsored by
Session Description
This session will introduce the latest developments in lithography technology, including immersion exposure, which remains the most advanced technique for semiconductor mass production; nano-imprint technology, a new technique that is attracting attention; and multi-electron beam technology, for which demand is growing in conjunction with miniaturization.
Program Agenda
Naoya Hayashi, Dai Nippon Printing Co., Ltd.
Hisanobu Azuma, Canon Inc.
12:55-13:25
Next-generation immersion scanner technology and performance for 7nm node
Hiroto Imagawa
Senior Researcher
Performance Development Section 4th Development Department Development Sector Semiconductor Lithography Business Unit
NIKON CORPORATION
In order to continue using 193nm immersion lithography at the 7nm node, the industry will need to use more multiple patterning, which will require continuous improvements in accuracy and yield. Nikon has developed the next-generation immersion scanner with a new projection optics module and a new alignment module focusing on improving accuracy and yield. In this presentation, we will introduce the new technology of the next-generation Nikon immersion scanner and provide performance data that demonstrate the 193nm scanner's continuing value for use at the 7nm lithographic node.
13:25-13:55
Progress of Nano Imprint Lithography
Takao Ukaji
General Manager
Semiconductor Production Equipment NGL Development Div. 2
CANON INC.
The nanoimprint attracts attention in low CoO and superior resolution performance as lithography technics in the next generation. By this lecture, I report the circumstance of the latest and future nanoimprint technical development, which have been installed on new nanoimprint equipment that we develop toward application to the leading edge NAND FLASH or DRAM devices, and mask-replication development.
13:55-14:25
Multi-Beam Mask Writer MBMW-101 for the 7 nm node, and beyond
Elmar Platzgummer
Chief Executive Officer
IMS Nanofabrication AG
The world’s first high throughput multi-beam mask writer (MBMW) has been realized by upgrading the existing MBMW Alpha tool with a 10x faster data path. In this tool a multi-beam column provides 262k programmable beams; the current density is adjustable up to 1 A/cm², resulting in a total beam current of c. 1 µA. With the upgraded 120 Gbps data path a 7 nm node mask can be written in less than 10 hours. The performance of the MBMW tool and its extendibility to future nodes will be discussed.